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IRF3305PBF

IRF3305PBF

IRF3305PBF

Infineon Technologies

IRF3305PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF3305PBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2004
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional FeatureAVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Current Rating75A
Number of Elements 1
Power Dissipation-Max 330W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation330W
Case Connection DRAIN
Turn On Delay Time16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3650pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Rise Time88ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 34 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 75A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.008Ohm
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 560A
Avalanche Energy Rating (Eas) 860 mJ
Height 16.51mm
Length 10.668mm
Width 4.826mm
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:3963 items

IRF3305PBF Product Details

IRF3305PBF Description


IRF3305PBF is a 55v HEXFET? Power MOSFET. The HEXFET Power MOSFET IRF3305PBF utilizes a rugged planar process technology and device design, which greatly improves the Safe Operating Area(SOA) of the device. The operating junction and storage temperature are between -55 and 175℃. The MOSFET IRF3305PBF is in the TO-220-3 package with 330W power dissipation.



IRF3305PBF Features


  • Designed to support Linear Gate Drive Applications

  • 175°C Operating Temperature

  • Low Thermal Resistance Junction - Case

  • Rugged Process Technology and Design

  • Fully Avalanche Rated

  • Lead-Free



IRF3305PBF Applications


  • DC motor drive

  • High-efficiency synchronous rectification in SMPS

  • Uninterruptible power supply

  • High-speed power switching

  • Hard switched and high-frequency circuits


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