Name: IRF7492TRPBF
Brand: Infineon Technologies
SKU: IRF7492TRPBF
Availability: InStock

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IRF7492TRPBF

Manufacturer part number:IRF7492TRPBF

Manufacturer:Infineon Technologies

Description:IRF7492TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF7492TRPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	79MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
Power Dissipation	2.5W
Turn On Delay Time	15 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	79mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1820pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.7A Ta
Gate Charge (Qg) (Max) @ Vgs	59nC @ 10V
Rise Time	13ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	3.7A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Input Capacitance	1.82nF
Drain to Source Resistance	79mOhm
Rds On Max	79 mΩ
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free

IRF7492TRPBF Product Details

IRF7492TRPBF Description

IRF7492TRPBF belongs to the family of power MOSFETs provided by Infineon Technologies. It is able to minimize switching losses based on low gate-to-drain charges. Due to its high quality and reliable performance, it is optimized for a wide range of applications, including high-frequency DC?DC converters and more.