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STU60N3LH5

STU60N3LH5

STU60N3LH5

STMicroelectronics

STU60N3LH5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STU60N3LH5 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Series STripFET™ V
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Additional FeatureULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STU60N
Pin Count3
Number of Elements 1
Power Dissipation-Max 60W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation60W
Case Connection DRAIN
Turn On Delay Time6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.4m Ω @ 24A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1620pF @ 25V
Current - Continuous Drain (Id) @ 25°C 48A Tc
Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 5V
Rise Time33ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.2 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 24A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 22V
Drain Current-Max (Abs) (ID) 48A
Drain to Source Breakdown Voltage 30V
Height 6.9mm
Length 6.6mm
Width 2.4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:2490 items

STU60N3LH5 Product Details

STU60N3LH5 Description


The STU60N3LH5 STripFET?V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit.



STU60N3LH5 Features


  • RDS(on) * Qg industry benchmark

  • Extremely low on-resistance RDS(on)

  • Very low switching gate charge

  • High avalanche ruggedness

  • Low gate drive power losses

  • ROHS3 Compliant

  • No SVHC



STU60N3LH5 Applications


  • Switching applications

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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