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IRF7314TRPBF

IRF7314TRPBF

IRF7314TRPBF

Infineon Technologies

IRF7314TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

SOT-23

IRF7314TRPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 1997
Series HEXFET®
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 58mOhm
Additional FeatureAVALANCHE RATED
Voltage - Rated DC -20V
Max Power Dissipation2W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-5.3A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number IRF7314PBF
Number of Elements 2
Row Spacing6.3 mm
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation2W
Turn On Delay Time15 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 58m Ω @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 780pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5.3A
Gate Charge (Qg) (Max) @ Vgs 29nC @ 4.5V
Rise Time40ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 49 ns
Turn-Off Delay Time 41 ns
Continuous Drain Current (ID) -5.3A
Threshold Voltage -700mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Avalanche Energy Rating (Eas) 150 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Recovery Time 71 ns
FET Feature Logic Level Gate
Nominal Vgs -700 mV
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:8253 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.02000$1.02
500$1.0098$504.9
1000$0.9996$999.6
1500$0.9894$1484.1
2000$0.9792$1958.4
2500$0.969$2422.5

IRF7314TRPBF Product Details

IRF7314TRPBF Description


The fifth generation HEXFET of the International Rectifier Company adopts advanced technology to achieve a very low on-resistance per silicon, this advantage. Combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, it provides designers with extremely efficient and reliable devices for use in a variety of applications.

SO-8 is improved by customizing lead frames to enhance thermal characteristics and multi-chip capabilities, making it an ideal choice for a variety of powerapplications.Withtheseimprovementsmultiple devices, which can be used to greatly reduce the packaging required by gas phase infrared or wave soldering technology in circuit board space applications.


IRF7314TRPBF Features


GenerationVTechnology

Ultra Low On-Resistance

Dual P-Channel Mosfet

Surface Mount

Available in Tape &Reel

Dynamic dv/dt Rating

Fast Switching

Lead-Free

IRF7314TRPBF Applications


it provides designers with extremely efficient and reliable devices for use in a variety of applications.





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