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IRF7233TR

IRF7233TR

IRF7233TR

Infineon Technologies

MOSFET P-CH 12V 9.5A 8-SOIC

SOT-23

IRF7233TR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SO
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 1999
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 20mOhm @ 9.5A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 10V
Current - Continuous Drain (Id) @ 25°C 9.5A Ta
Gate Charge (Qg) (Max) @ Vgs 74nC @ 5V
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
RoHS StatusNon-RoHS Compliant
In-Stock:2758 items

About IRF7233TR

The IRF7233TR from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET P-CH 12V 9.5A 8-SOIC.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF7233TR, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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