IRF6603 Description
The IRF6603 combines the latest HEXFET? Power MOSFETSilicon technology with the advanced DirectFET? packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only a 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, and infra-red or convection soldering techniques. The DirectFET package allows dual-sided cooling to maximize thermal transfer in power systems, IMPROVING the previous best thermal resistance by 80%.
IRF6603 Features
Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7 mm)
Dual-Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
IRF6603 Applications
