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IRF6668TR1

IRF6668TR1

IRF6668TR1

Infineon Technologies

MOSFET N-CH 80V 55A DIRECTFET-MZ

SOT-23

IRF6668TR1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MZ
Operating Temperature-40°C~150°C TJ
PackagingTape & Reel (TR)
Published 2005
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.8W Ta 89W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 15m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1320pF @ 25V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS StatusNon-RoHS Compliant
In-Stock:2645 items

About IRF6668TR1

The IRF6668TR1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 80V 55A DIRECTFET-MZ.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF6668TR1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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