Welcome to Hotenda.com Online Store!

logo
userjoin
Home

SIA419DJ-T1-GE3

SIA419DJ-T1-GE3

SIA419DJ-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 12A SC70-6

SOT-23

SIA419DJ-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2009
Series TrenchFET®
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 30MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count6
JESD-30 Code S-XDSO-N3
Number of Elements 1
Power Dissipation-Max 3.5W Ta 19W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation3.5W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 5.9A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 5V
Rise Time46ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±5V
Fall Time (Typ) 52 ns
Turn-Off Delay Time 91 ns
Continuous Drain Current (ID) -12A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 5V
Drain Current-Max (Abs) (ID) 8.8A
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 30A
Nominal Vgs -1 V
Radiation HardeningNo
REACH SVHC Unknown
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4759 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.697074$0.697074
10$0.657616$6.57616
100$0.620393$62.0393
500$0.585276$292.638
1000$0.552147$552.147

About SIA419DJ-T1-GE3

The SIA419DJ-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET P-CH 20V 12A SC70-6.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SIA419DJ-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

Get Subscriber

Enter Your Email Address, Get the Latest News