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IRF6655TRPBF

IRF6655TRPBF

IRF6655TRPBF

Infineon Technologies

MOSFET N-CH 100V 4.2A DIRECTFET

SOT-23

IRF6655TRPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric SH
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature-40°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
Series HEXFET®
JESD-609 Code e1
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Current Rating4.2A
JESD-30 Code R-XBCC-N2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.2W Ta 42W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation42W
Case Connection DRAIN
Turn On Delay Time7.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 62m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 4.8V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.2A Ta 19A Tc
Gate Charge (Qg) (Max) @ Vgs 11.7nC @ 10V
Rise Time2.8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.3 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 4.2mA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.062Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 34A
Avalanche Energy Rating (Eas) 11 mJ
Height 508μm
Length 4.826mm
Width 3.9624mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3185 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.709861$0.709861
10$0.669680$6.6968
100$0.631774$63.1774
500$0.596013$298.0065
1000$0.562276$562.276

About IRF6655TRPBF

The IRF6655TRPBF from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 100V 4.2A DIRECTFET.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF6655TRPBF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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