Name: IRF7201PBF
Brand: Infineon Technologies
SKU: IRF7201PBF
Availability: InStock

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IRF7201PBF

Manufacturer part number:IRF7201PBF

Manufacturer:Infineon Technologies

Description:IRF7201PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF7201PBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-G8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	30m Ω @ 7.3A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7.3A Tc
Gate Charge (Qg) (Max) @ Vgs	28nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
JEDEC-95 Code	MS-012AA
Drain Current-Max (Abs) (ID)	7.3A
Drain-source On Resistance-Max	0.03Ohm
Pulsed Drain Current-Max (IDM)	58A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	70 mJ
RoHS Status	ROHS3 Compliant

IRF7201PBF Product Details

IRF7201PBF Description

IRF7201PBF is a leaded 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package. The HEXFET? power MOSFETs from International Rectifier feature advanced processing techniques for extremely low on-resistance per silicon area.

In addition to the fast switching speed and ruggedized design of HEXFET MOSFETs, this benefit makes these devices extremely efficient and reliable across a wide range of applications.