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IRF6621TRPBF

IRF6621TRPBF

IRF6621TRPBF

Infineon Technologies

MOSFET N-CH 30V 12A DIRECTFET

SOT-23

IRF6621TRPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric SQ
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature-40°C~150°C TJ
PackagingTape & Reel (TR)
Published 2005
Series HEXFET®
JESD-609 Code e1
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Current Rating12A
JESD-30 Code R-XBCC-N2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.2W Ta 42W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation42W
Case Connection DRAIN
Turn On Delay Time12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.1m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1460pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A Ta 55A Tc
Gate Charge (Qg) (Max) @ Vgs 17.5nC @ 4.5V
Rise Time14ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.1 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 9.6A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0091Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 96A
Avalanche Energy Rating (Eas) 13 mJ
Nominal Vgs 1.8 V
Height 506μm
Length 4.826mm
Width 3.95mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4256 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.313842$0.313842
10$0.296077$2.96077
100$0.279318$27.9318
500$0.263508$131.754
1000$0.248593$248.593

About IRF6621TRPBF

The IRF6621TRPBF from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 30V 12A DIRECTFET.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF6621TRPBF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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