Name: FDMC612PZ
Brand: ON Semiconductor
SKU: FDMC612PZ
Availability: InStock

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FDMC612PZ

Manufacturer part number:FDMC612PZ

Manufacturer:ON Semiconductor

Description:FDMC612PZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMC612PZ Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	CONSULT SALES OFFICE (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Number of Pins	8
Weight	180mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	PowerTrench®
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	S-PDSO-N5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.3W Ta 26W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.3W
Case Connection	DRAIN
Turn On Delay Time	26 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.4m Ω @ 14A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7995pF @ 10V
Current - Continuous Drain (Id) @ 25°C	14A Ta
Gate Charge (Qg) (Max) @ Vgs	74nC @ 4.5V
Rise Time	52ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	81 ns
Turn-Off Delay Time	96 ns
Continuous Drain Current (ID)	14A
JEDEC-95 Code	MO-240BA
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	40A
Pulsed Drain Current-Max (IDM)	50A
DS Breakdown Voltage-Min	20V
Height	750μm
Length	3.3mm
Width	3.3mm
RoHS Status	RoHS Compliant

FDMC612PZ Product Details

FDMC612PZ Description

Fairchild Semiconductor's innovative PowerTrench? process is used to make this P-Channel MOSFET, which has been tuned for rDS(0N), switching performance, and robustness. These devices are designed to ensure a high level of dv/dt capability for the most demanding applications, in addition to a significant reduction in on-resistance.

FDMC612PZ Features

At Vgg = -4.5 V, Iq = -14 A, MaxDs(on) = 844 mQ.
At Vgg = -2.5 V, Iq = -11 A, MaxDS(on)= 43 mfl.
High power and current handling capability in a widely used surface mount package with high performance trench technology for extremely low rDS(on).
Tefmination is RoHS compliant and lead-free. HBM ESD capability level > 3.6 KV is normal (Note 4)