Name: IRF6614
Brand: Infineon Technologies
SKU: IRF6614
Availability: InStock

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IRF6614

Manufacturer part number:IRF6614

Manufacturer:Infineon Technologies

Description:IRF6614 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF6614 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric ST
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-XBCC-N3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.1W Ta 42W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.3m Ω @ 12.7A, 10V
Vgs(th) (Max) @ Id	2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2560pF @ 20V
Current - Continuous Drain (Id) @ 25°C	12.7A Ta 55A Tc
Gate Charge (Qg) (Max) @ Vgs	29nC @ 4.5V
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	12.7A
Drain-source On Resistance-Max	0.0083Ohm
Pulsed Drain Current-Max (IDM)	102A
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	22 mJ
RoHS Status	Non-RoHS Compliant

IRF6614 Product Details

IRF6614 Description

IRF6614 is a type of DirectFET? power MOSFET developed by Infineon Technologies utilizing its latest Silicon technology and the advanced DirectFET? packaging to provide extremely low on-state resistance in a package with a MICRO-8 footprint. It is able to minimize both conduction and switching losses based on its low resistance, low charge, and ultra-low package inductance. As a result, power MOSFET IRF6614 is ideally suitable for high-efficiency DC-DC converters.