Name: MTP50P03HDL
Brand: ON Semiconductor
SKU: MTP50P03HDL
Availability: InStock

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MTP50P03HDL

Manufacturer part number:MTP50P03HDL

Manufacturer:ON Semiconductor

Description:MTP50P03HDL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MTP50P03HDL Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	OBSOLETE (Last Updated: 1 week ago)
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
JESD-609 Code	e0
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn80Pb20)
Additional Feature	AVALANCHE RATED
HTS Code	8541.29.00.95
Subcategory	Other Transistors
Voltage - Rated DC	-30V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	240
Reach Compliance Code	not_compliant
Current Rating	-50A
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	125W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	125W
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	25m Ω @ 25A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	100nC @ 5V
Rise Time	340ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±15V
Forward Voltage	2.39V
Fall Time (Typ)	218 ns
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	50A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	15V
Drain-source On Resistance-Max	0.025Ohm
Drain to Source Breakdown Voltage	-30V
Avalanche Energy Rating (Eas)	1250 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead

MTP50P03HDL Product Details

MTP50P03HDL Description

High energy can be handled by MTP50P03HDL Power MOSFET in both avalanche and commutation modes. An effective drain-to-source diode with a quick recovery period is also provided by the energy-saving design. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls.

MTP50P03HDL Features

Avalanche Energy Specified
Pb-Free Packages are Available
A diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode