Name: IRF6612TRPBF
Brand: Infineon Technologies
SKU: IRF6612TRPBF
Availability: InStock

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IRF6612TRPBF

Manufacturer part number:IRF6612TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 24A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6612TRPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MX
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	HEXFET®
JESD-609 Code	e1
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
Current Rating	24A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-XBCC-N3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.8W Ta 89W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	89W
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.3m Ω @ 24A, 10V
Vgs(th) (Max) @ Id	2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3970pF @ 15V
Current - Continuous Drain (Id) @ 25°C	24A Ta 136A Tc
Gate Charge (Qg) (Max) @ Vgs	45nC @ 4.5V
Rise Time	52ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	4.8 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	136mA
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0033Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	190A
Avalanche Energy Rating (Eas)	37 mJ
Nominal Vgs	1.8 V
Height	506μm
Length	6.35mm
Width	5.05mm
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free

About IRF6612TRPBF

The IRF6612TRPBF from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 30V 24A DIRECTFET.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF6612TRPBF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.