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IRF6603TR1

IRF6603TR1

IRF6603TR1

Infineon Technologies

MOSFET N-CH 30V 27A DIRECTFET

SOT-23

IRF6603TR1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MT
Operating Temperature-40°C~150°C TJ
PackagingTape & Reel (TR)
Published 2005
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.6W Ta 42W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.4m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6590pF @ 15V
Current - Continuous Drain (Id) @ 25°C 27A Ta 92A Tc
Gate Charge (Qg) (Max) @ Vgs 72nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +20V, -12V
In-Stock:4772 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.108861$1.108861
10$1.046096$10.46096
100$0.986882$98.6882
500$0.931021$465.5105
1000$0.878321$878.321

About IRF6603TR1

The IRF6603TR1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 30V 27A DIRECTFET.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF6603TR1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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