IRFB4115GPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRFB4115GPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2009
Series
HEXFET®
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
11MOhm
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
250
[email protected] Reflow Temperature-Max (s)
30
Number of Elements
1
Power Dissipation-Max
380W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
380W
Case Connection
DRAIN
Turn On Delay Time
18 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
11m Ω @ 62A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5270pF @ 50V
Current - Continuous Drain (Id) @ 25°C
104A Tc
Gate Charge (Qg) (Max) @ Vgs
120nC @ 10V
Rise Time
73ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
39 ns
Turn-Off Delay Time
41 ns
Continuous Drain Current (ID)
104A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
150V
Pulsed Drain Current-Max (IDM)
420A
Avalanche Energy Rating (Eas)
220 mJ
Nominal Vgs
3 V
Height
16.51mm
Length
10.668mm
Width
4.826mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:4575 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.51000
$5.51
10
$4.91600
$49.16
100
$4.03080
$403.08
500
$3.26398
$1631.99
IRFB4115GPBF Product Details
IRFB4115GPBF Description
IRFB4115GPBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 150V. The operating temperature of the IRFB4115GPBF is -55°C~175°C TJ and its maximum power dissipation is 380W. IRFB4115GPBF has 3 pins and it is available in Tube packaging way.
IRFB4115GPBF Features
Improved Gate, Avalanche and Dynamic dV/dtRuggedness
Fully Characterized Capacitance and Avalanche
SOA Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
IRFB4115GPBF Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Related Products
Similar Transistors - FETs, MOSFETs - Single from Infineon Technologies and other manufacturers
