IRF3710ZSPBF Description
The incredibly low on-resistance per silicon area of this HEXFET? Power MOSFET is achieved by using the most recent manufacturing processes. A 175°C junction operating temperature, quick switching, and increased repeating avalanche rating are other characteristics of this design. These characteristics work together to make this design a very effective and dependable tool for use in a wide range of applications.
IRF3710ZSPBF Features
Contemporary Process Technology
Very Little On-Resistance
Rating for dynamic dv/dt
Operating Temperature: 175 °C
Speedy Switching
Recurrent Avalanche Permitted to Tjmax
IRF3710ZSPBF Applications
Switching applications
