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SIJ400DP-T1-GE3

SIJ400DP-T1-GE3

SIJ400DP-T1-GE3

Vishay Siliconix

MOSFET, N CH, 30V, 32A, PPAK SO8L

SOT-23

SIJ400DP-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2015
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count8
JESD-30 Code R-PSSO-G5
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 5W Ta 69.4W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation69.4W
Case Connection DRAIN
Turn On Delay Time48 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7765pF @ 15V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Rise Time66ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 49 ns
Continuous Drain Current (ID) 32A
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 26.3A
Drain-source On Resistance-Max 0.004Ohm
Drain to Source Breakdown Voltage 30V
Nominal Vgs 2.5 V
REACH SVHC Unknown
RoHS StatusROHS3 Compliant
In-Stock:3872 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.984129$0.984129
10$0.928423$9.28423
100$0.875871$87.5871
500$0.826293$413.1465
1000$0.779522$779.522

About SIJ400DP-T1-GE3

The SIJ400DP-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET, N CH, 30V, 32A, PPAK SO8L.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SIJ400DP-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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