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IRF2907ZS-7PPBF

IRF2907ZS-7PPBF

IRF2907ZS-7PPBF

Infineon Technologies

MOSFET N-CH 75V 160A D2PAK7

SOT-23

IRF2907ZS-7PPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2005
Series HEXFET®
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 4.5MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 75V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating160A
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G6
Number of Elements 1
Power Dissipation-Max 300W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation300W
Case Connection DRAIN
Turn On Delay Time21 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.8m Ω @ 110A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7580pF @ 25V
Current - Continuous Drain (Id) @ 25°C 160A Tc
Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
Rise Time90ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 44 ns
Turn-Off Delay Time 92 ns
Reverse Recovery Time 35 ns
Continuous Drain Current (ID) 160A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Dual Supply Voltage 75V
Recovery Time 53 ns
Nominal Vgs 4 V
Height 4.5466mm
Length 10.3378mm
Width 10.05mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:3708 items

About IRF2907ZS-7PPBF

The IRF2907ZS-7PPBF from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 75V 160A D2PAK7.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF2907ZS-7PPBF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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