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IRF1405ZSPBF

IRF1405ZSPBF

IRF1405ZSPBF

Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

SOT-23

IRF1405ZSPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2003
Series HEXFET®
JESD-609 Code e3
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 4.9MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 230W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation230W
Case Connection DRAIN
Turn On Delay Time18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.9m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4780pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time110ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 82 ns
Turn-Off Delay Time 48 ns
Continuous Drain Current (ID) 75A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 600A
Avalanche Energy Rating (Eas) 420 mJ
Nominal Vgs 4 V
Height 4.826mm
Length 10.668mm
Width 9.65mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1253 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.174594$1.174594
10$1.108107$11.08107
100$1.045385$104.5385
500$0.986212$493.106
1000$0.930388$930.388

About IRF1405ZSPBF

The IRF1405ZSPBF from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 55V 75A D2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF1405ZSPBF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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