Name: TSM230N06CZ C0G
Brand: Taiwan Semiconductor Corporation
SKU: TSM230N06CZ C0G
Availability: InStock

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TSM230N06CZ C0G

Manufacturer part number:TSM230N06CZ C0G

Manufacturer:Taiwan Semiconductor Corporation

Description:MOSFET (Metal Oxide) N-Channel 23mOhm @ 20A, 10V ±20V 1680pF @ 25V 28nC @ 10V 60V TO-220-3

Case Package:SOT-23

Datasheet:TSM230N06CZ C0G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220
Operating Temperature	150°C TJ
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	104W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	23mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1680pF @ 25V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	28nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant

TSM230N06CZ C0G Product Details

TSM230N06CZ C0G Overview

CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1680pF @ 25V.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).