IPW60R070C6FKSA1

IPW60R070C6FKSA1 Overview

When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1135 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3800pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 53A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 159A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IPW60R070C6FKSA1 Features

the avalanche energy rating (Eas) is 1135 mJ
based on its rated peak drain current 159A.
a 600V drain to source voltage (Vdss)

IPW60R070C6FKSA1 Applications

There are a lot of Infineon Technologies
IPW60R070C6FKSA1 applications of single MOSFETs transistors.

• LCD/LED TV
• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools