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IPP110N20N3GXKSA1

IPP110N20N3GXKSA1

IPP110N20N3GXKSA1

Infineon Technologies

IPP110N20N3GXKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IPP110N20N3GXKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2006
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 300W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation300W
Turn On Delay Time18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 88A, 10V
Vgs(th) (Max) @ Id 4V @ 270μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 7100pF @ 100V
Current - Continuous Drain (Id) @ 25°C 88A Tc
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Rise Time26ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 41 ns
Continuous Drain Current (ID) 88A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage200V
Drain to Source Breakdown Voltage 200V
Avalanche Energy Rating (Eas) 560 mJ
Max Junction Temperature (Tj) 175°C
Height 20.7mm
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:921 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.300000$3.3
10$3.113208$31.13208
100$2.936988$293.6988
500$2.770744$1385.372
1000$2.613909$2613.909

IPP110N20N3GXKSA1 Product Details

Description


The IPP110N20N3GXKSA1 is an OptiMOSTM3 Power-Transistor. Power transistors are utilized in high-power amplifiers and power supplies. Power transistors are best suited for applications that require a lot of current and voltage. It is a junction transistor that is used in audio and switching circuits and is built to handle high currents and power.



Features


? N-channel, normal level

? Excellent gate charge x R DS(on) product (FOM)

? Very low on-resistance R DS(on)

? 175 °C operating temperature

? Pb-free lead plating; RoHS compliant

? Qualified according to JEDEC1) for target application

? Halogen-free according to IEC61249-2-21

? Ideal for high-frequency switching and synchronous rectification



Applications


? Switch-mode power supplies (SMPS)

? Relays.

? Converters.

? Power amplifiers.

? DC to AC converters.

? Power supply.

? Power control circuits.

? Inverters.


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