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IPP086N10N3GHKSA1

IPP086N10N3GHKSA1

IPP086N10N3GHKSA1

Infineon Technologies

MOSFET N-CH 100V 80A TO220-3

SOT-23

IPP086N10N3GHKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2014
Series OptiMOS™
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 125W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.6m Ω @ 73A, 10V
Vgs(th) (Max) @ Id 3.5V @ 75μA
Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 50V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
In-Stock:2037 items

About IPP086N10N3GHKSA1

The IPP086N10N3GHKSA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 100V 80A TO220-3.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPP086N10N3GHKSA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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