Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IPG20N10S4L22AATMA1

IPG20N10S4L22AATMA1

IPG20N10S4L22AATMA1

Infineon Technologies

IPG20N10S4L22AATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

SOT-23

IPG20N10S4L22AATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2013
Series OptiMOS™
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Power Dissipation60W
Terminal FormFLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-F6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time5 ns
Power - Max 60W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 22m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 2.1V @ 25μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1755pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time3ns
Fall Time (Typ) 18 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage100V
Drain-source On Resistance-Max 0.022Ohm
Avalanche Energy Rating (Eas) 130 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:3886 items

Pricing & Ordering

QuantityUnit PriceExt. Price

IPG20N10S4L22AATMA1 Product Details

IPG20N10S4L22AATMA1 Description


The very first transistor IPG20N10S4L22AATMA1invented was a point contact transistor. The main function of a transistor is to amplify the weak signals and regulate them accordingly. A transistor compromises of semiconductor materials like silicon or germanium or gallium – arsenide.

IPG20N10S4L22AATMA1 Features


? Dual N-channel Logic Level - Enhancement mode

? AEC Q101 qualified

? MSL1 up to 260°C peak reflow

? 175°C operating temperature

? Green Product (RoHS compliant)

? 100% Avalanche tested

? Feasible for automatic optical inspection (AOI)

IPG20N10S4L22AATMA1 Applications


P-N-P transistors

N-P-N transistors



Get Subscriber

Enter Your Email Address, Get the Latest News