IPG16N10S461ATMA1 Description
Thanks to innovative production techniques, the Fifth Generation HEXFETs from International Rectifier feature an extraordinarily low on-resistance per silicon area. Thanks to the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, the designer now has a highly reliable and durable device for use in a variety of applications. The footprint area of the new Micro8 package, which is half that of the conventional SO-8, is the smallest of any SOIC design. The Micro8 is the ideal tool because printed circuit board space is limited in many applications. Because of its compact profile, the Micro8 will easily fit into extremely small application environments like portable devices and PCMCIA cards (1.1mm).
IPG16N10S461ATMA1 Features
? Normal Level - Enhancement mode for dual N-channels
? AEC Q101 certification
? MSL1 peak reflow up to 260 ??C
? Operating temperature of 175 ??C
? Eco-Friendly Goods (RoHS compliant)
? Complete avalanche testing
IPG16N10S461ATMA1 Applications
Switching applications
