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IRF7316TRPBF

IRF7316TRPBF

IRF7316TRPBF

Infineon Technologies

IRF7316TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

SOT-23

IRF7316TRPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2004
Series HEXFET®
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 58mOhm
Additional FeatureAVALANCHE RATED
Voltage - Rated DC -30V
Max Power Dissipation2W
Terminal FormGULL WING
Current Rating-4.9A
Base Part Number IRF7316PBF
Number of Elements 2
Number of Channels 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation2W
Turn On Delay Time13 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 58m Ω @ 4.9A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.9A
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Rise Time13ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) -4.9A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 30A
Avalanche Energy Rating (Eas) 140 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Recovery Time 66 ns
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Nominal Vgs -1 V
Height 1.75mm
Length 4.9784mm
Width 3.9878mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Contains Lead, Lead Free
In-Stock:5349 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.19000$1.19
500$1.1781$589.05
1000$1.1662$1166.2
1500$1.1543$1731.45
2000$1.1424$2284.8
2500$1.1305$2826.25

IRF7316TRPBF Product Details

IRF7316TRPBF Description

The fourth generation HEXFET rectifier from the world uses advanced processing technology to achieve a positive low turn-on rate on each side, which is combined with the fast switching speed of HEXFET power supply and rugged device design! As we all know, MOSFET provides designers with an extremely efficient and reliable device for use in a variety of applications.

SO-8 has been improved with custom eadtrame to enhance thermomechanical properties and multi-chip capabilities, making it ideal for a variety of power applications. With these improvements, multiple devices can be used while Dramatica reduces circuit board space. The package is suitable for gas phase infrared. Or wave soldering technology

IRF7316TRPBF Features


GenerationVTechnology

Ultra LowOn-Resistance

Dual P-Channel MOSFET

Surface Mount

Fully AvalancheRated

Lead-Free

IRF7316TRPBF Applications


MOSFET provides designers with an extremely efficient and reliable device for use in a variety of applications.





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