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IPD90N06S407ATMA1

  • IPD90N06S407ATMA1 - IPD90N06S407ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
  • IPD90N06S407ATMA1 - IPD90N06S407ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

IPD90N06S407ATMA1

IPD90N06S407ATMA1

Infineon Technologies

IPD90N06S407ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IPD90N06S407ATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2009
Series OptiMOS™
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 79W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.9m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 40μA
Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS StatusROHS3 Compliant
In-Stock:4640 items

Pricing & Ordering

QuantityUnit PriceExt. Price

IPD90N06S407ATMA1 Product Details

IPD90N06S407ATMA1 Description


T2 Power-Transistor by OptiMOS



IPD90N06S407ATMA1 Features


• Enhancing mode for N-channel


• AEC Q101 certification


• MSL1 peak reflow up to 260 °C


• Operating temperature of 175 °C


• Eco-Friendly Goods (RoHS compliant)


• Avalanche tested in full


• Lowest Possible RDSon



IPD90N06S407ATMA1 Applications


Switching applications


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