IRFR4105ZPBF Description
The incredibly low on-resistance per silicon area of this HEXFET? Power MOSFET is made possible by the use of cutting-edge manufacturing processes. A 175??C junction operating temperature, quick switching, and increased repeating avalanche rating are other characteristics of this design. These characteristics work together to provide a highly effective and dependable gadget that may be used in a wide range of applications.
IRFR4105ZPBF Features
Advanced Process Technology
Ultra Low On-Resistance
175??C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
IRFR4105ZPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
