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IPD65R660CFDATMA1

IPD65R660CFDATMA1

IPD65R660CFDATMA1

Infineon Technologies

MOSFET N-CH 650V 6A TO252

SOT-23

IPD65R660CFDATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2008
Series CoolMOS™
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 62.5W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 660m Ω @ 2.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 615pF @ 100V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS StatusROHS3 Compliant
In-Stock:6323 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.792470$0.79247
10$0.747613$7.47613
100$0.705296$70.5296
500$0.665373$332.6865
1000$0.627711$627.711

About IPD65R660CFDATMA1

The IPD65R660CFDATMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 650V 6A TO252.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPD65R660CFDATMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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