FDD86252 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FDD86252 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Weight
260.37mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2011
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
3.1W Ta 89W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3.1W
Case Connection
DRAIN
Turn On Delay Time
8.3 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
52m Ω @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
985pF @ 75V
Current - Continuous Drain (Id) @ 25°C
5A Ta 27A Tc
Gate Charge (Qg) (Max) @ Vgs
16nC @ 10V
Rise Time
1.8ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
3 ns
Turn-Off Delay Time
14 ns
Continuous Drain Current (ID)
5A
Threshold Voltage
3.1V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
5A
Drain-source On Resistance-Max
0.052Ohm
Drain to Source Breakdown Voltage
150V
Avalanche Energy Rating (Eas)
72 mJ
Height
2.39mm
Length
6.73mm
Width
6.22mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:3906 items
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FDD86252 Product Details
FDD86252 Description
The FDD86252 is an N-channel MOSFET produced using an advanced PowerTrench? process. The onsemi FDD86252 has been specially tailored to minimize the ON-state resistance and yet maintain superior switching performance. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor FDD86252 is in the DPAK-3 package with 3.1W power dissipation.
FDD86252 Features
Shielded Gate MOSFET Technology
Max rDS(on) = 52 m? at VGS = 10 V, ID = 5 A
Max rDS(on) = 72 m? at VGS = 6 V, ID = 4 A
100% UIL tested
RoHS Compliant
FDD86252 Applications
Cellular phones
Laptop computers
Photovoltaic systems
Wind turbines
Shunt voltage regulator and the series voltage regulator
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