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IPD65R600E6ATMA1

IPD65R600E6ATMA1

IPD65R600E6ATMA1

Infineon Technologies

MOSFET N-CH 650V 7.3A TO252-3

SOT-23

IPD65R600E6ATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2008
Series CoolMOS™ E6
JESD-609 Code e3
Pbfree Code no
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 63W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation63W
Case Connection DRAIN
Turn On Delay Time10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 2.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 210μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 100V
Current - Continuous Drain (Id) @ 25°C 7.3A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time8ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 64 ns
Continuous Drain Current (ID) 7.3A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.6Ohm
Drain to Source Breakdown Voltage 700V
Pulsed Drain Current-Max (IDM) 18A
Avalanche Energy Rating (Eas) 142 mJ
Height 2.41mm
Length 6.73mm
Width 6.22mm
RoHS StatusROHS3 Compliant
In-Stock:5686 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.436007$0.436007
10$0.411326$4.11326
100$0.388044$38.8044
500$0.366079$183.0395
1000$0.345358$345.358

About IPD65R600E6ATMA1

The IPD65R600E6ATMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 650V 7.3A TO252-3.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPD65R600E6ATMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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