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IXFX180N25T

IXFX180N25T

IXFX180N25T

IXYS

MOSFET (Metal Oxide) N-Channel Tube 12.9m Ω @ 60A, 10V ±20V 28000pF @ 25V 345nC @ 10V 250V TO-247-3

SOT-23

IXFX180N25T Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series GigaMOS™
Published 2009
JESD-609 Code e1
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional FeatureAVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code R-PSIP-T3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1390W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12.9m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 28000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 345nC @ 10V
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 180A
Drain-source On Resistance-Max 0.0129Ohm
Pulsed Drain Current-Max (IDM) 500A
DS Breakdown Voltage-Min 250V
Avalanche Energy Rating (Eas) 3000 mJ
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:360 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$27.196997$27.196997
10$25.657544$256.57544
100$24.205230$2420.523
500$22.835123$11417.5615
1000$21.542569$21542.569

IXFX180N25T Product Details

IXFX180N25T Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 3000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 28000pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 180A.Peak drain current for this device is 500A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 250V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 250V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFX180N25T Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 180A
based on its rated peak drain current 500A.
a 250V drain to source voltage (Vdss)


IXFX180N25T Applications


There are a lot of IXYS
IXFX180N25T applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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