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IPD65R250E6XTMA1

IPD65R250E6XTMA1

IPD65R250E6XTMA1

Infineon Technologies

Trans MOSFET N-CH 700V 16.1A 3-Pin(2+Tab) TO-252

SOT-23

IPD65R250E6XTMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2008
Series CoolMOS™ E6
JESD-609 Code e3
Pbfree Code yes
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 208W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation208W
Turn On Delay Time11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 250m Ω @ 4.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 400μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 16.1A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time9ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 76 ns
Continuous Drain Current (ID) 16.1A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage650V
Drain-source On Resistance-Max 0.25Ohm
Drain to Source Breakdown Voltage 700V
Pulsed Drain Current-Max (IDM) 46A
Avalanche Energy Rating (Eas) 290 mJ
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3731 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.766798$0.766798
10$0.723394$7.23394
100$0.682447$68.2447
500$0.643818$321.909
1000$0.607375$607.375

About IPD65R250E6XTMA1

The IPD65R250E6XTMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET N-CH 700V 16.1A 3-Pin(2+Tab) TO-252.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPD65R250E6XTMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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