FQP3N80 Description
These N-channel enhanced power field effect transistors are produced using Fairchild's proprietary planar stripe DMOS technology. This advanced technology is tailor-made to minimize on-resistance and provides excellent switching performance. And withstand high energy pulses in avalanche and rectifier modes. These devices are very suitable for high efficiency switching mode power supply.
FQP3N80 Features
·3.0A,800VRDS(on)=5.0Ω@VGs=10 V
·Low gate charge(typical 15 nC)
·Low Crss(typical 7.0 pF)·Fast switching
·100% avalanche tested·lmproved dvidt capability
FQP3N80 Applications
high efficiency switching mode power supply
