FDPF7N50 Description
The N-Channel enhancement mode power field effect transistors were created utilizing the exclusive planar stripe DMOS process developed by Fairchild.
In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. These devices are ideal for active power factor correction and high efficiency switching mode power supply.
FDPF7N50 Features
7A, 500V, RDS(on) = 0.9|? @VGS = 10 V
Low gate charge ( typical 12.8 nC)
Low Crss ( typical 9 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
FDPF7N50 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
