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FDI2532

FDI2532

FDI2532

ON Semiconductor

MOSFET 150V N-Ch UltraFET Trench

SOT-23

FDI2532 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package I2PAK (TO-262)
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2002
Series PowerTrench®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 310W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5870pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Ta 79A Tc
Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
In-Stock:1483 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.479381$0.479381
10$0.452246$4.52246
100$0.426648$42.6648
500$0.402498$201.249
1000$0.379714$379.714

About FDI2532

The FDI2532 from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET 150V N-Ch UltraFET Trench.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FDI2532, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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