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IPB107N20NAATMA1

  • IPB107N20NAATMA1 - IPB107N20NAATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
  • IPB107N20NAATMA1 - IPB107N20NAATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

IPB107N20NAATMA1

IPB107N20NAATMA1

Infineon Technologies

IPB107N20NAATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IPB107N20NAATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation300W
Case Connection DRAIN
Turn On Delay Time18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10.7m Ω @ 88A, 10V
Vgs(th) (Max) @ Id 4V @ 270μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 7100pF @ 100V
Current - Continuous Drain (Id) @ 25°C 88A Tc
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Rise Time26ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 41 ns
Continuous Drain Current (ID) 88A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage200V
Avalanche Energy Rating (Eas) 560 mJ
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:637 items

Pricing & Ordering

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IPB107N20NAATMA1 Product Details

IPB107N20NAATMA1 Description


The power-transistor OptiMOSTM3



IPB107N20NAATMA1 Features


• N-channel, standard level


• The gate charge x R DS(on) product is excellent (FOM)


• RDS with very low on-resistance (on)


• Operating temperature of 175 °C



IPB107N20NAATMA1 Applications


Switching applications


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