Name: SI2365EDS-T1-GE3
Brand: Vishay Siliconix
SKU: SI2365EDS-T1-GE3
Price: 0.42000 USD
Availability: InStock

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SI2365EDS-T1-GE3

Manufacturer part number:SI2365EDS-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 5.9A TO-236

Case Package:SOT-23

Datasheet:SI2365EDS-T1-GE3 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1W Ta 1.7W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1W
Turn On Delay Time	9 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	32m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Current - Continuous Drain (Id) @ 25°C	5.9A Tc
Gate Charge (Qg) (Max) @ Vgs	36nC @ 8V
Rise Time	32μs
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	21 μs
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	-4.5A
Threshold Voltage	-1V
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	5.9A
Drain to Source Breakdown Voltage	-20V
Max Junction Temperature (Tj)	150°C
Height	1.12mm
Length	3.04mm
Width	1.4mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

About SI2365EDS-T1-GE3

The SI2365EDS-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET P-CH 20V 5.9A TO-236.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SI2365EDS-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.