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IPB072N15N3GATMA1

IPB072N15N3GATMA1

IPB072N15N3GATMA1

Infineon Technologies

IPB072N15N3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IPB072N15N3GATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation300W
Case Connection DRAIN
Turn On Delay Time25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 270μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 5470pF @ 75V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V
Rise Time35ns
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Vgs (Max) ±20V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage150V
Drain-source On Resistance-Max 0.0072Ohm
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 780 mJ
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:927 items

Pricing & Ordering

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IPB072N15N3GATMA1 Product Details

IPB072N15N3GATMA1 Description


The Infineon Technologies IPB072N15N3GATMA1 is a 150V OptiMOS? N-Channel Power MOSFET achieving a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor.



IPB072N15N3GATMA1 Features


  • Excellent switching performance

  • World?ˉs lowest R DS(on)

  • Very low Q g and Q gd

  • Excellent gate charge x R DS(on) product (FOM)

  • RoHS compliant-halogen free

  • MSL1 rated 2



IPB072N15N3GATMA1 Applications


  • Synchronous rectification for AC-DC SMPS

  • Motor control for 48V¨C8 0V systems (i.e. domestic vehicles, power tools, trucks)

  • Isolated DC-DC converters (telecom and datacom systems)

  • Or-ing switches and circuit breakers in 48V systems

  • Class D audio amplifiers

  • Uninterruptable power supplies (UPS)


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