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FQD3P50TM

FQD3P50TM

FQD3P50TM

ON Semiconductor

FQD3P50TM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FQD3P50TM Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2000
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 4.9Ohm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -500V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Current Rating-2.1A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Voltage 400V
Power Dissipation-Max 2.5W Ta 50W Tc
Element ConfigurationSingle
Current 18A
Operating ModeENHANCEMENT MODE
Power Dissipation2.5W
Case Connection DRAIN
Turn On Delay Time12 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.9 Ω @ 1.05A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.1A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time56ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) -2.1A
Threshold Voltage -5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage -500V
Avalanche Energy Rating (Eas) 250 mJ
Max Junction Temperature (Tj) 150°C
Height 2.517mm
Length 6.73mm
Width 6.22mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:5832 items

Pricing & Ordering

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FQD3P50TM Product Details

FQD3P50TM Description


FQD3P50TM belongs to the family of P-channel QFET? MOSFETs that are designed to minimize on-state resistance, offer advanced switching performance, and high avalanche energy strength based on planar stripe and DMOS technology provided by ON Semiconductor. Due to its high quality and reliable performance, FQD3P50TM is well suited for switching mode power supplies, active power factor correction, and electronic lamp ballasts.



FQD3P50TM Features


  • Low gate charge

  • Advanced switching performance

  • High avalanche energy strength

  • Planar stripe and DMOS technology

  • Available in the DPAK3 package



FQD3P50TM Applications


  • Electronic lamp ballasts

  • Active power factor correction

  • Switching mode power supplies


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