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NTHD4N02FT1G

NTHD4N02FT1G

NTHD4N02FT1G

ON Semiconductor

MOSFET 20V 3.9A N-Channel w/3.7A Schottky

SOT-23

NTHD4N02FT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 11 hours ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormC BEND
Peak Reflow Temperature (Cel) 260
Current Rating2.7A
[email protected] Reflow Temperature-Max (s) 40
Pin Count8
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 910mW Tj
Operating ModeENHANCEMENT MODE
Power Dissipation910mW
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.9A Tj
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Rise Time9ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 3.9A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 2.9A
Drain to Source Breakdown Voltage 20V
FET Feature Schottky Diode (Isolated)
Feedback Cap-Max (Crss) 50 pF
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:33110 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.19000$0.19
500$0.1881$94.05
1000$0.1862$186.2
1500$0.1843$276.45
2000$0.1824$364.8
2500$0.1805$451.25

About NTHD4N02FT1G

The NTHD4N02FT1G from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET 20V 3.9A N-Channel w/3.7A Schottky.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the NTHD4N02FT1G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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