SSM3K56MFV,L3F

SSM3K56MFV,L3F Overview

A device's maximal input capacitance is 55pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 800mA, which represents the maximum continuous current it can conduct.Its turn-off delay time is 8.5 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.5V 4.5V).

SSM3K56MFV,L3F Features

a continuous drain current (ID) of 800mA
the turn-off delay time is 8.5 ns
a 20V drain to source voltage (Vdss)

SSM3K56MFV,L3F Applications

There are a lot of Toshiba Semiconductor and Storage
SSM3K56MFV,L3F applications of single MOSFETs transistors.

• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples