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IPA80R1K4CEXKSA2

IPA80R1K4CEXKSA2

IPA80R1K4CEXKSA2

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tube 1.4 Ω @ 2.3A, 10V ±20V 570pF @ 100V 23nC @ 10V TO-220-3 Full Pack

SOT-23

IPA80R1K4CEXKSA2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Operating Temperature-40°C~150°C TJ
PackagingTube
Series CoolMOS™
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 31W Tc
Operating ModeENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4 Ω @ 2.3A, 10V
Vgs(th) (Max) @ Id 3.9V @ 240μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 100V
Current - Continuous Drain (Id) @ 25°C 3.9A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 3.9A
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage800V
Pulsed Drain Current-Max (IDM) 12A
Avalanche Energy Rating (Eas) 170 mJ
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3241 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.62000$1.62
10$1.43400$14.34
100$1.13300$113.3
500$0.87864$439.32

IPA80R1K4CEXKSA2 Product Details

IPA80R1K4CEXKSA2 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 170 mJ.A device's maximal input capacitance is 570pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 3.9A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 12A, which is its maximum rated peak drain current.By using 800V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (10V).

IPA80R1K4CEXKSA2 Features


the avalanche energy rating (Eas) is 170 mJ
a continuous drain current (ID) of 3.9A
based on its rated peak drain current 12A.


IPA80R1K4CEXKSA2 Applications


There are a lot of Infineon Technologies
IPA80R1K4CEXKSA2 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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