IPD122N10N3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IPD122N10N3GATMA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Series
OptiMOS™
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
94W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
12.2m Ω @ 46A, 10V
Vgs(th) (Max) @ Id
3.5V @ 46μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
2500pF @ 50V
Current - Continuous Drain (Id) @ 25°C
59A Tc
Gate Charge (Qg) (Max) @ Vgs
35nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
59A
JEDEC-95 Code
TO-252AA
Max Dual Supply Voltage
100V
Drain-source On Resistance-Max
0.0122Ohm
Avalanche Energy Rating (Eas)
70 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
In-Stock:4193 items
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Unit Price
Ext. Price
IPD122N10N3GATMA1 Product Details
IPD122N10N3GATMA1 Description
IPD122N10N3GATMA1 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 100V. The operating temperature of IPD122N10N3GATMA1 is -55°C~175°C TJ and its maximum power dissipation is 94W Tc. IPD122N10N3GATMA1 has 3 pins and it is available in Tape & Reel (TR) packaging way.
IPD122N10N3GATMA1 Features
N-channel, normal level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
175 °C operating temperature
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1) for the target application
Ideal for high-frequency switching and synchronous rectification
Halogen-free according to IEC61249-2-21
IPD122N10N3GATMA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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