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IKW50N65H5AXKSA1

IKW50N65H5AXKSA1

IKW50N65H5AXKSA1

Infineon Technologies

IKW50N65H5AXKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKW50N65H5AXKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-40°C~175°C TJ
PackagingTube
Published 2013
Series Automotive, AEC-Q101, TrenchStop™
Pbfree Code yes
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation270W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Input Type Standard
Power - Max 270W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 80A
Reverse Recovery Time 58 ns
Collector Emitter Breakdown Voltage650V
Turn On Time33 ns
Test Condition 400V, 25A, 12 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Turn Off Time-Nom (toff) 213 ns
IGBT Type Trench
Gate Charge116nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 21ns/173ns
Switching Energy 450μJ (on), 160μJ (off)
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2756 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$9.405923$9.405923
10$8.873513$88.73513
100$8.371238$837.1238
500$7.897395$3948.6975
1000$7.450372$7450.372

IKW50N65H5AXKSA1 Product Details

IKW50N65H5AXKSA1 Description


IKW50N65H5AXKSA1 is a 650V High speed 5 IGBT in TRENCHSTOPTM 5 technology packed with RAPID 1 fast and soft antiparallel diode. The Infineon IKW50N65H5AXKSA1 can be applied in Solar converters, Uninterruptible power supplies, Welding converters, and Mid to high-range switching frequency converters due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor TPS65310AQRVJRQ1 is in the PG-TO247-3 package with 305W power dissipation.



IKW50N65H5AXKSA1 Features


Best-in-Class efficiency in hard switching and resonant topologies

Plug-and-play replacement of previous generation IGBTs

650V breakdown voltage

Low gate charge QG

IGBT packed with RAPID 1 fast and soft antiparallel diode

Maximum junction temperature 175°C

Qualified according to JEDEC for target applications

Pb-free lead plating; RoHS compliant



IKW50N65H5AXKSA1 Applications


Solar converters

Uninterruptible power supplies

Welding converters

Mid to high-range switching frequency converters


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