STGW35NB60S datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGW35NB60S Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
PowerMESH™
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
200W
Base Part Number
STGW35
Pin Count
3
Number of Elements
1
Element Configuration
Single
Case Connection
ISOLATED
Input Type
Standard
Power - Max
200W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
70A
Collector Emitter Breakdown Voltage
600V
Turn On Time
153 ns
Test Condition
480V, 20A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.7V @ 15V, 20A
Turn Off Time-Nom (toff)
3600 ns
Gate Charge
83nC
Current - Collector Pulsed (Icm)
250A
Td (on/off) @ 25°C
92ns/1.1μs
Switching Energy
840μJ (on), 7.4mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
In-Stock:2141 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
STGW35NB60S Product Details
STGW35NB60S Description
STMicroelectronics has created an innovative family of IGBTs, the PowerMESHTM IGBTs, with remarkable performances using the most recent high voltage technology based on a proprietary strip arrangement.
STGW35NB60S Features
Low on-voltage drop (VCEsat)
Low input capacitance
High current capability
STGW35NB60S Applications
Light dimmer
HID
Welding
Motor control
Static relays
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