IKW30N60TFKSA1 Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
IKW30N60TFKSA1 Features
· Very low VCE(sat) 1.5V (typ.)
· Maximum Junction Temperature 175°C
· Short circuit withstand time 5ms
· Designed for :
- Frequency Converters
- Uninterruptible Power Supply
· TRENCHSTOP? and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
· Positive temperature coefficient in VCE(sat)
· Low EMI
· Low Gate Charge
· Very soft, fast recovery anti-parallel Emitter Controlled HE diode
· Qualified according to JEDEC1
for target applications
· Pb-free lead plating; RoHS compliant
IKW30N60TFKSA1 APPLICATIONS
Power for processors, ASICS, FPGAs, and RF chipsets
Portable instrumentation and medical devices
Space constrained devices
