IKW25N120T2FKSA1

IKW25N120T2FKSA1 Description

The IKW25N120T2FKSA1 is a Low Loss DuoPack: IGBT in 2nd generation TrenchStop? with soft, fast recovery anti-parallel Emitter Controlled Diode. The BJT and MOSFET are combined to form the IGBT, or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current.

IKW25N120T2FKSA1 Features

• Low EMI

• Low Gate Charge

• Very soft, fast recovery anti-parallel Emitter Controlled HE Diode

• Qualified according to JEDEC1 for target applications

• Pb-free lead plating; RoHS compliant

• Short circuit withstand time – 10 μs

• Designed for :

- Frequency Converters

- Uninterrupted Power Supply

• TrenchStop?2nd generation for 1200 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

• Easy paralleling capability due to positive temperature coefficient in VCE(sat)

IKW25N120T2FKSA1 Applications

• It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.

• It is used in UPS (Uninterruptible Power Supply) system.

• It is used in AC and DC motor drives offering speed control.

• It is used in chopper and inverters.

• It is used in solar inverters.